Insulator Material Silicon Technology Vlsi

Silicon-Germanium-On-Insulator - Silicon Germanium-on-insulator (SGOI) is a technology similar to the Silicon-On-Insulator (SOI) technology currently employed in today's computer chips. SGOI increases the speed of the transistors inside microchips by stretching the space between the atoms, which forces the electricity to travel faster.

VLSI Technology, Inc - VLSI Technology, Inc was an American semiconductor company which designed and manufactured custom and semi-custom ICs. The company was based in Silicon Valley, with headquarters at 1109 McKay Drive in San Jose, California.

Strained silicon directly on insulator - Strained silicon directly on insulator (SSDOI) is a procedure developed by IBM which removes the silicon germanium layer in the strained silicon process leaving the strained silicon directly on the insulator.

Silicon on insulator - Silicon on insulator (SOI) is a layered structure consisting of a thin layer of silicon, from 50 nm to 100 µm, which is created on an insulating substrate, which is usually sapphire or silicon with an insulating layer of silicon dioxide 80 nm thick on its surface. This process reduces the amount of electrical charge that the transistor has to move during a switching operation, increasing speed (up to 15%) and reducing switching energy (up to 20%) over CMOS-based chips.

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